SVFP10N60CAFJ Datasheet - Silan Microelectronics

600V N-CHANNEL MOSFET

SVFP10N60CAFJ Features

* 2 1 3 1.Gate 2.Drain 3.Source 12 3 1 TO-220FJ-3L 2 3 TO-220FJH-3L

* 10A, 600V, RDS(on)(typ.)=0.60@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability ORDERING INFORMATION Part No. SVFP10N60CAFJ SVFP10N60CAFJH Package TO-220FJ-3L TO-220FJH-

SVFP10N60CAFJ General Description

SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switch.

SVFP10N60CAFJ Datasheet (287.07 KB)