SVFP4N65CAD Datasheet - Silan Microelectronics

650V N-CHANNEL MOSFET

SVFP4N65CAD Features

* 4A, 650V, RDS(on)(typ.)=2.3@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L NOMENCLATURE S V F PX N E X X C A X Silan VDMOS Code of F-Cell process Process Version,P denotesPASSIVATION Nominal cur

SVFP4N65CAD General Description

SVFP4N65CAD is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching pe.

SVFP4N65CAD Datasheet (326.31 KB)