SVFP7N65CD Datasheet - Silan Microelectronics

SVFP7N65CD 650V N-CHANNEL MOSFET

SVFP7N65CD/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching .

SVFP7N65CD Features

* 2 1 3 1.Gate 2.Dratin 3.Source 12 3 TO-251J-3L 13 TO-252-2L

* 7A, 650V, RDS(on)(typ.)=1.1@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability ORDERING INFORMATION Part No. SVFP7N65CDTR SVFP7N65CMJ Package TO-252-2L TO-251J-3L Marking P7N65CD

SVFP7N65CD-SilanMicroelectronics.pdf