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SVFP7N65CMJ, SVFP7N65CFJD Datasheet - Silan Microelectronics

SVFP7N65CMJ 650V N-CHANNEL MOSFET

SVFP7N65CFJD/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switch.

SVFP7N65CMJ Features

* 7A, 650V, RDS(on)(typ.)=1.1@VGS=10V

* Low gate charge

* Low Crss

* Fast switching

* Improved dv/dt capability NOMENCLATURE 2 1 123 3 TO-251J-3L 1.Gate 2.Dratin 3.Source 123 TO-220FJD-3L 1 3 TO-252-2L S V F PX N X X C A X Silan VDMOS Code of F-Cell process PASSIVATION Nomin

SVFP7N65CFJD-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVFP7N65CMJ, SVFP7N65CFJD. Please refer to the document for exact specifications by model.
SVFP7N65CMJ Datasheet Preview Page 2 SVFP7N65CMJ Datasheet Preview Page 3

Datasheet Details

Part number:

SVFP7N65CMJ, SVFP7N65CFJD

Manufacturer:

Silan Microelectronics

File Size:

386.93 KB

Description:

650v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVFP7N65CMJ, SVFP7N65CFJD.
Please refer to the document for exact specifications by model.

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SVFP7N65CMJ SVFP7N65CFJD 650V N-CHANNEL MOSFET Silan Microelectronics

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