SVS24N60FJD2

600V DP MOS POWER TRANSISTOR

Silan Microelectronics

SVS24N60FJD2 Features

* 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123

SVS24N60FJD2 General Description

SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal beh.

SVS24N60FJD2 Datasheet (352.86 KB)

SVS24N60FJD2 Datasheet Preview — Preview of SVS24N60FJD2 PDF

Datasheet Details

Part number:

SVS24N60FJD2

Manufacturer:

Silan Microelectronics

File Size:

352.86 KB

Description:

600v dp mos power transistor.

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SVS24N60FJD2 600V MOS POWER TRANSISTOR Silan Microelectronics

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SVS24N60FJD2 Features

SVS24N60FJD2 General Description

Datasheet Details

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