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SVS24N60FJD2 600V DP MOS POWER TRANSISTOR

SVS24N60FJD2 Description

Silan Microelectronics SVS24N60F(FJ)(PN)(T)D2_Datasheet 24A, 600V DP MOS POWER TRANSISTOR GENERAL .
SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology.

SVS24N60FJD2 Features

* 24A, 600V, RDS(on)(typ. )=0.14@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123

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600V MOS POWER TRANSISTOR Silan Microelectronics
Silan Microelectronics SVS24N60FJD2-like datasheet