SVS24N60PND2, SVS24N60FJD2 Datasheet - Silan Microelectronics

SVS24N60PND2 600V DP MOS POWER TRANSISTOR

SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal beh.

SVS24N60PND2 Features

* 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123

SVS24N60FJD2-SilanMicroelectronics.pdf

SVS24N60PND2 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVS24N60PND2, SVS24N60FJD2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVS24N60PND2, SVS24N60FJD2

Manufacturer:

Silan Microelectronics

File Size:

352.86 KB

Description:

600v dp mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVS24N60PND2, SVS24N60FJD2.
Please refer to the document for exact specifications by model.

SVS24N60PND2 Distributor

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SVS24N60PND2 SVS24N60FJD2 600V MOS POWER TRANSISTOR Silan Microelectronics