SVS24N60FJD2-SilanMicroelectronics.pdf
Datasheet Details
Part number:
SVS24N60TD2, SVS24N60FJD2
Manufacturer:
Silan Microelectronics
File Size:
352.86 KB
Description:
600v dp mos power transistor.
Note:
This datasheet PDF includes multiple part numbers: SVS24N60TD2, SVS24N60FJD2.
Please refer to the document for exact specifications by model.
SVS24N60TD2, SVS24N60FJD2, 600V DP MOS POWER TRANSISTOR
SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high voltage power MOSFET produced using Silan’s DP MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal beh
SVS24N60TD2 Features
* 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 2 1 3 1.Gate 2.Drain 3.Source 1 23 123 TO-220F-3L TO-220-3L 1 23 TO-220FJ-3L 123
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