Part number:
SVSP11N60DD2
Manufacturer:
Silan Microelectronics
File Size:
430.27 KB
Description:
600v super junction mos power transistor.
SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.
It achieves low conduction loss and switching losses.
It leads the design engineers to their power converters with high efficiency, high power density, and super
SVSP11N60DD2 Features
* 11A,600V, RDS(on)(typ.)=0.3@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12
SVSP11N60DD2-SilanMicroelectronics.pdf
Datasheet Details
SVSP11N60DD2
Silan Microelectronics
430.27 KB
600v super junction mos power transistor.
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