SVSP11N60DD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Datasheet Details

Part number	SVSP11N60DD2
Manufacturer	Silan Microelectronics
File Size	430.27 KB
Description	600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVSP11N60DD2-SilanMicroelectronics.pdf

SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

11A,600V, RDS(on)(typ. )=0.3@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12 3 TO-262-3L 123 TO-220FJD-3L 12 3 TO-220F-3L.

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Published: Mar 17, 2025 |