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SVSP11N60FJDD2, SVSP11N60DD2 Datasheet - Silan Microelectronics

SVSP11N60FJDD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and super.

SVSP11N60FJDD2 Features

* 11A,600V, RDS(on)(typ.)=0.3@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12

SVSP11N60DD2-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVSP11N60FJDD2, SVSP11N60DD2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVSP11N60FJDD2, SVSP11N60DD2

Manufacturer:

Silan Microelectronics

File Size:

430.27 KB

Description:

600v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP11N60FJDD2, SVSP11N60DD2.
Please refer to the document for exact specifications by model.

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SVSP11N60FJDD2 SVSP11N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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