SVSP11N60FJDD2, SVSP11N60DD2 Datasheet - Silan Microelectronics

SVSP11N60FJDD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and super.

SVSP11N60FJDD2 Features

* 11A,600V, RDS(on)(typ.)=0.3@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12

SVSP11N60DD2-SilanMicroelectronics.pdf