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SVSP11N60FD2 Datasheet - Silan Microelectronics

600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP11N60FD2 Features

* 11A,600V, RDS(on)(typ.)=0.3@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12

SVSP11N60FD2 General Description

SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and super.

SVSP11N60FD2 Datasheet (430.27 KB)

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Datasheet Details

Part number:

SVSP11N60FD2

Manufacturer:

Silan Microelectronics

File Size:

430.27 KB

Description:

600v super junction mos power transistor.

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SVSP11N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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SVSP11N60FD2 Features

SVSP11N60FD2 General Description

Datasheet Details

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Description:

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