SVSP11N60SD2, SVSP11N60DD2 - 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Datasheet Details

Part number	SVSP11N60SD2, SVSP11N60DD2
Manufacturer	Silan Microelectronics
File Size	430.27 KB
Description	600V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVSP11N60DD2-SilanMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: SVSP11N60SD2, SVSP11N60DD2. Please refer to the document for exact specifications by model.

SVSP11N60D/F/S/FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

11A,600V, RDS(on)(typ. )=0.3@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability 2 1 1 3 TO-263-2L 3 1 1.Gate 2.Drain 3.Source 3 TO-252-2L 1 2 3 TO-220-3L 12 3 TO-262-3L 123 TO-220FJD-3L 12 3 TO-220F-3L.

📁 SVSP11N60SD2 Similar Datasheet

SVSP65R110FJDHD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)
SVSP65R110LHD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)
SVSP65R110P7HD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)
SVSP65R110SHD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)
SVSP65R110THD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR (Silan Semiconductors)

Other Datasheets by Silan Microelectronics

Published: Mar 17, 2025 |