SVSP11N70DD2, SVSP11N70FD2-SilanMicroelectronics - 700V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Datasheet Details

Part number	SVSP11N70DD2, SVSP11N70FD2-SilanMicroelectronics
Manufacturer	Silan Microelectronics
File Size	436.22 KB
Description	700V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVSP11N70FD2-SilanMicroelectronics_removed.pdf
Note	This datasheet PDF includes multiple part numbers: SVSP11N70DD2, SVSP11N70FD2-SilanMicroelectronics. Please refer to the document for exact specifications by model.

SVSP11N70F/FJH/D/MJ/SD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

11A,700V, RDS(on)(typ. )=0.37@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Enhanced avalanche capability.
Extreme dv/dt rated.
High peak current capability 2 1 1 3 TO-252-2L 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220FJH-3L 1 2 3 TO-251J-3L 1 3 TO-263-2L 12 3 TO-220F-3L.

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Published: Mar 19, 2025 |