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SVSP11N70SD2

700V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP11N70SD2 Features

* 11A,700V, RDS(on)(typ.)=0.37@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 2 1 1 3 TO-252-2L 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220FJH-3L 1 2 3 TO-251

SVSP11N70SD2 General Description

SVSP11N70F/FJH/D/MJ/SD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superi.

SVSP11N70SD2 Datasheet (436.22 KB)

Preview of SVSP11N70SD2 PDF

Datasheet Details

Part number:

SVSP11N70SD2

Manufacturer:

Silan Microelectronics

File Size:

436.22 KB

Description:

700v super junction mos power transistor.

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SVSP11N70SD2 700V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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