SVSP11N70FJHD2, SVSP11N70FD2-SilanMicroelectronics Datasheet - Silan Microelectronics

SVSP11N70FJHD2 700V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP11N70F/FJH/D/MJ/SD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superi.

SVSP11N70FJHD2 Features

* 11A,700V, RDS(on)(typ.)=0.37@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Enhanced avalanche capability

* Extreme dv/dt rated

* High peak current capability 2 1 1 3 TO-252-2L 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220FJH-3L 1 2 3 TO-251

SVSP11N70FD2-SilanMicroelectronics_removed.pdf

SVSP11N70FJHD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVSP11N70FJHD2, SVSP11N70FD2-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVSP11N70FJHD2, SVSP11N70FD2-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

436.22 KB

Description:

700v super junction mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP11N70FJHD2, SVSP11N70FD2-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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SVSP11N70FJHD2 SVSP11N70FD2-SilanMicroelectronics 700V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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