SVSP14N60FD2, SVSP14N60TD2 Datasheet - Silan Microelectronics

SVSP14N60FD2 600V DP MOS POWER TRANSISTOR

SVSP14N60F(FJD)(T)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior .

SVSP14N60FD2 Features

* 2 1 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 123 TO-220F-3L

* 14A, 600V, RDS(on)(typ.)=0.25@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJD-3L OR

SVSP14N60TD2-SilanMicroelectronics.pdf

SVSP14N60FD2 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVSP14N60FD2, SVSP14N60TD2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVSP14N60FD2, SVSP14N60TD2

Manufacturer:

Silan Microelectronics

File Size:

287.08 KB

Description:

600v dp mos power transistor.

Note:

This datasheet PDF includes multiple part numbers: SVSP14N60FD2, SVSP14N60TD2.
Please refer to the document for exact specifications by model.

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SVSP14N60FD2 SVSP14N60TD2 600V MOS POWER TRANSISTOR Silan Microelectronics

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