SVSP14N60TD2 Datasheet (Silan Microelectronics)

SVSP14N60TD2, 600V DP MOS POWER TRANSISTOR

SVSP14N60F(FJD)(T)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior

SVSP14N60TD2 Features

* 2 1 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 123 TO-220F-3L

* 14A, 600V, RDS(on)(typ.)=0.25@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJD-3L OR