SVSP14N60FJDD2

600V DP MOS POWER TRANSISTOR

Silan Microelectronics

SVSP14N60FJDD2 Features

* 2 1 3 1.Gate 2.Drain 3.Source 1 2 3 TO-220-3L 123 TO-220F-3L

* 14A, 600V, RDS(on)(typ.)=0.25@VGS=10V

* New revolutionary high voltage technology

* Ultra low gate charge

* Periodic avalanche rated

* Extreme dv/dt rated

* High peak current capability 12 3 TO-220FJD-3L OR

SVSP14N60FJDD2 General Description

SVSP14N60F(FJD)(T)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior .

SVSP14N60FJDD2 Datasheet (287.08 KB)

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Datasheet Details

Part number:

SVSP14N60FJDD2

Manufacturer:

Silan Microelectronics

File Size:

287.08 KB

Description:

600v dp mos power transistor.

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SVSP14N60FJDD2 600V MOS POWER TRANSISTOR Silan Microelectronics

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SVSP14N60FJDD2 Features

SVSP14N60FJDD2 General Description

Datasheet Details

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