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SGB100N042 - 100V N-Channel MOSFET

SGB100N042 Description

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power MOSFET SG *100N042 Rev.0.9 Jul.2021 ww.
The SG-MOSFET uses advanced trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

SGB100N042 Features

* VDS 100V
* ID (at Vgs=10V) 120A
* Typ. RDS(on) (at Vgs=10V) 3.7mΩ
* Low Gate Charge (typ. Qg = 71nC)
* 100% avalanche tested SGB100N042 SGP100N042 Absolute Maximum Ratings Symbol Parameter VDS ID IDM VGS IAS EAS PD TJ, TSTG Drain-Source Voltag

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Datasheet Details

Part number
SGB100N042
Manufacturer
Super Semiconductor
File Size
513.55 KB
Datasheet
SGB100N042-SuperSemiconductor.pdf
Description
100V N-Channel MOSFET

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100V N-Channel MOSFET Super Semiconductor
Super Semiconductor SGB100N042-like datasheet