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MJD122 - SMD Darlington Power Transistor

Datasheet Summary

Description

MJD122 VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 100 VEBO IC Emitter-Base Voltage Collector Current Continuous Collector Current Peak 5 8 16 IB Base Current 120 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 RthJC TJ, TSTG Thermal Resistance from Junction

Features

  • Designed for general purpose amplifier and low speed switching.

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Datasheet Details

Part number MJD122
Manufacturer TAITRON
File Size 212.04 KB
Description SMD Darlington Power Transistor
Datasheet download datasheet MJD122 Datasheet
Additional preview pages of the MJD122 datasheet.

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Full PDF Text Transcription

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SMD Darlington Power Transistor (NPN) MJD122 SMD Darlington Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD122 VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 100 VEBO IC Emitter-Base Voltage Collector Current Continuous Collector Current Peak 5 8 16 IB Base Current 120 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 RthJC TJ, TSTG Thermal Resistance from Junction to Case Operating and Storage Junction Temperature Range 6.
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