MJD122 Datasheet (TAITRON) - SMD Darlington Power Transistor

MJD122, SMD Darlington Power Transistor

MJD122 VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 100 100 VEBO IC Emitter-Base Voltage Collector Current Continuous Collector Current Peak 5 8 16 IB Base Current 120 Power Dissipation at TC=25°C PD Derate above 25°C 20 0.16 RthJC TJ, TSTG Thermal Resistance from Junction

MJD122 Features

* Designed for general purpose amplifier and low speed switching applications

* RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted