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WNM2016 - N-Channel Power MOSFET

WNM2016 Description

Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 .
The WNM2016 is N-Channel enhancement MOS Field Effect Transistor.

WNM2016 Features

* 3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6
* 2 = Device Code = Month (A~Z) Marking WT6

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Datasheet Details

Part number
WNM2016
Manufacturer
TY Semiconductor
File Size
103.01 KB
Datasheet
WNM2016-TYSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET TY Semiconductor
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