TSF20H120C - Trench MOS Barrier Schottky Rectifier

Product Overview

Taiwan Semiconductor

Datasheet Details

Part number	TSF20H120C
Manufacturer	Taiwan Semiconductor
File Size	225.29 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	TSF20H120C Datasheet
Note	This datasheet PDF includes multiple part numbers: TSF20H120C, TSF20H150C. Please refer to the document for exact specifications by model.
Additional preview pages of the TSF20H120C datasheet.

Product details

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 TSF20H100C 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG.2 TYPICAL FORWARD CHARACTERISTICS 100 TSF20H100C AVERAGE FORWARD CURRENT (A) 10 Tj=150oC 1 Tj=125oC Tj=100oC 0.1 Tj=25oC 0.01 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) TSF20H120C WITH HEATSINK 4in x 6in x 0.25in Al-Plate TSF20H150C CASE TEMPERATURE (oC) FIG.3 TYPICAL FORWARD CHARACTERISTICS 1

Features

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB.

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Other Datasheets by Taiwan Semiconductor

TSF20H100C - Trench MOS Barrier Schottky Rectifier
TSF20H150C - Trench MOS Barrier Schottky Rectifier
TSF2080C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TSF20L120C - Trench Schottky Rectifier
TSF20L150C - Trench Schottky Rectifier
TSF20L200C - Trench Schottky Rectifier

Published: Jan 22, 2014 |