TSF20H120C Datasheet, Rectifier, Taiwan Semiconductor

TSF20H120C Features

• Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Comp

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Part number:

TSF20H120C

Manufacturer:

Taiwan Semiconductor

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225.29kb

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📄 Datasheet

Description:

Trench mos barrier schottky rectifier. RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 1 FORWARD CURRENT DERATING CURVE 30 25 TSF20H100C 20 15 10

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TSF20H120C

Taiwan Semiconductor

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