Part number:
TSF20H120C
Manufacturer:
Taiwan Semiconductor
File Size:
225.29 KB
Description:
Trench mos barrier schottky rectifier.
* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220A
TSF20H120C Datasheet (225.29 KB)
TSF20H120C
Taiwan Semiconductor
225.29 KB
Trench mos barrier schottky rectifier.
📁 Related Datasheet
TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H100C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H150C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF204D00-S1 Saw Filters (Token)
TSF2080C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20L100C Schottky Barrier Rectifier (INCHANGE)
TSF20L120C Trench Schottky Rectifier (Taiwan Semiconductor)
TSF20L150C Trench Schottky Rectifier (Taiwan Semiconductor)
TSF20L200C Trench Schottky Rectifier (Taiwan Semiconductor)
TSF20N50M N-Channel MOSFET (Truesemi)