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TSM2312 20V N-Channel Enhancement Mode MOSFET

TSM2312 Description

TSM2312 20V N-Channel MOSFET SOT-23 Pin Definition: 1.Gate 2.Source 3.Drain Key Parameter Performance Parameter Value VDS VGS = 4.5V RDS(on) .
only.

TSM2312 Features

* Advance Trench Process Technology

TSM2312 Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: D15

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Datasheet Details

Part number
TSM2312
Manufacturer
Taiwan Semiconductor Company
File Size
672.01 KB
Datasheet
TSM2312_TaiwanSemiconductorCompany.pdf
Description
20V N-Channel Enhancement Mode MOSFET

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📌 All Tags

20V N-Channel Enhancement Mode MOSFET Taiwan Semiconductor Company
Taiwan Semiconductor Company TSM2312-like datasheet