1SS250 Datasheet - Toshiba Semiconductor

1SS250 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS250 High Voltage, High Speed Switching Application Small package : SC 59 Low forward voltage : VF (2) = 0.90 V (typ.) Fast reverse recovery time : trr = 60 ns (max) Small total capacitance : CT = 1.5 pF (typ.) 1SS250 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM .

1SS250_ToshibaSemiconductor.pdf