Datasheet Details
Part number:
1SS388
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
375.37 KB
Description:
Silicon Diode
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm * Small package * Low forward voltage: VF (3) = 0.54V (typ.) * Low reverse current: IR = 5μA (Max.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit