1SS388 Datasheet - Toshiba Semiconductor

1SS388 Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm Small package Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (Max.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1A Power dissipation .

1SS388_ToshibaSemiconductor.pdf