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1SS388 Datasheet - Toshiba Semiconductor

Datasheet Details

Part number:

1SS388

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

375.37 KB

Description:

Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm * Small package * Low forward voltage: VF (3) = 0.54V (typ.) * Low reverse current: IR = 5μA (Max.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit

1SS388_ToshibaSemiconductor.pdf

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1SS388, Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switching Application 1SS388 Unit: mm Small package Low forward voltage: VF (3) = 0.54V (typ.) Low reverse current: IR = 5μA (Max.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1A Power dissipation

1SS388 Distributor

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Toshiba Semiconductor 1SS388-like datasheet