1SS388
Toshiba ↗ Semiconductor
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Silicon diode.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS388
High Speed Switching Application
1SS388
Unit: mm
* Small package
* Low forward .
📁 Related Datasheet
1SS380 - Switching diode
(Rohm)
1SS380
Switching Diode (Low leakage)
●Outline
VRM 40 V IFM 225 mA Io 100 mA IFSM 400 mA
●Features H.
1SS380 - Silicon Epitaxial Planar Diode
(GME)
Silicon Epitaxial Planar Diode
FEATURES
Small surface mounting type High speed Suitable for high packing density
Pb
Lead-free
Production spec.
1SS380 - SURFACE MOUNT FAST SWITCHING DIODE
(WON-TOP)
® WON-TOP ELECTRONICS
1SS380
SURFACE MOUNT FAST SWITCHING DIODE
Pb
Features
Silicon Epitaxial Planar Die Construction
Fast Switching Speed Sur.
1SS380 - SWITCHING DIODE
(Kexin)
SMD Type
SWITCHING DIODE 1SS380
Diodes
Features
Ultra small mold type. (UMD2) High reliability.
SOD-323
1.7+0.1 -0.1
Unit: mm 0.85+0.05
-0.05
+0.
1SS380 - Silicon Epitaxial Planar Diodes
(LGE)
1SS380
Silicon Epitaxial Planar Diodes
SOD-323
Features
Small surface mounting type. High speed. Suitable for high packing density.
Applicatio.
1SS380TF - Switching Diode
(Rohm)
Switching Diode
1SS380TF
Applications High speed switching
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1 0.05
AEC-Q101 Qualified
Land size figur.
1SS380VM - Switching Diode
(ROHM)
1SS380VM
Switching Diode (Low leakage)
●Outline
VRM
80
V
IFM
225
mA
Io
100
mA
IFSM
400
.
1SS381 - Silicon diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS381
1SS381
VHF Tuner Band Switch Applications
• Small package • Small total capacitance: CT = 1.2 pF.
