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2SA1971 Silicon PNP Transistor

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Description

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications 2SA1971 Unit: mm * High breakdown voltage: V.

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Applications

* 2SA1971 Unit: mm
* High breakdown voltage: VCEO =
* 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta

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2SA1971 Silicon PNP Transistor Toshiba Semiconductor
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