2SA1971 Datasheet - Toshiba Semiconductor

2SA1971 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications 2SA1971 Unit: mm High breakdown voltage: VCEO = 400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Ta = 25°C (Note 1) VCBO VCEO VEBO IC ICP IB PC 400 V 400 V 7 V.

2SA1971_ToshibaSemiconductor.pdf