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2SA2097 - Silicon PNP Transistor

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Part number 2SA2097
Manufacturer Toshiba Semiconductor
File Size 154.07 KB
Description Silicon PNP Transistor
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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications 2SA2097 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) • Low collector-emitter saturation: VCE (sat) = −0.27 V (max) • High-speed switching: tf = 55 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V Collector current DC IC Pulse ICP −5 A −10 Base current IB −0.5 A Collector power dissipation Ta = 25°C PC Tc = 25°C 1 W JEDEC 20 JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-7J1A Weight: 0.36 g (typ.
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