30J322 - Silicon N-Channel IGBT
(Toshiba)
GT30J322
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J322
FOURTH-GENERATION IGBT
CURRENT RESONANCE INVERTER SWITCHING APPLIC.
30J301 - Silicon N-Channel IGBT
(Toshiba)
GT30J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit.
30J311 - Silicon N-Channel IGBT
(Toshiba)
GT30J311
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J311
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit.
30J101 - Silicon N-Channel IGBT
(Toshiba)
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J101
High Power Switching Applications
GT30J101
Unit: mmç
• The 3.
30J121 - Silicon N-Channel IGBT
(Toshiba)
GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
Uni.
30J122 - Silicon N-Channel IGBT
(Toshiba)
.DataSheet.co.kr
GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT
CURRENT RESONANCE INVERTER.