Datasheet Details
Part number:
30J301
Manufacturer:
File Size:
316.32 KB
Description:
Silicon n-channel igbt.
Datasheet Details
Part number:
30J301
Manufacturer:
File Size:
316.32 KB
Description:
Silicon n-channel igbt.
GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm l The 3rd Generation l Enhancement Mode l High Speed : tf = 0.30µs (Max.) l Low Saturation Voltage : VCE (sat) = 2.7V (Max.) l FRD included between Emitter and Collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage DC Collector Current 1ms Emitter Collecto
30J301 Distributor
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