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30J301 Datasheet - Toshiba

30J301-Toshiba.pdf

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Datasheet Details

Part number:

30J301

Manufacturer:

Toshiba ↗

File Size:

316.32 KB

Description:

Silicon n-channel igbt.

30J301, Silicon N-Channel IGBT

GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm l The 3rd Generation l Enhancement Mode l High Speed : tf = 0.30µs (Max.) l Low Saturation Voltage : VCE (sat) = 2.7V (Max.) l FRD included between Emitter and Collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage DC Collector Current 1ms Emitter Collecto

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