Datasheet4U Logo Datasheet4U.com

30J311 Datasheet - Toshiba

30J311-Toshiba.pdf

Preview of 30J311 PDF
30J311 Datasheet Preview Page 2 30J311 Datasheet Preview Page 3

Datasheet Details

Part number:

30J311

Manufacturer:

Toshiba ↗

File Size:

480.95 KB

Description:

Silicon n-channel igbt.

30J311, Silicon N-Channel IGBT

GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage DC Collector Current 1ms Emitter Collector Forward

30J311 Distributors

📁 Related Datasheet

📌 All Tags

Toshiba 30J311-like datasheet