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30J311 Silicon N-Channel IGBT

30J311 Description

GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

30J311 Applications

* MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30μs (Max. ) Low saturation voltage : VCE (sat) = 2.7V (Max. ) FRD included between emitter and collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector
* Emitter Voltage Gate

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Silicon N-Channel IGBT Toshiba
Toshiba 30J311-like datasheet