30J101 - Silicon N-Channel IGBT
(Toshiba)
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J101
High Power Switching Applications
GT30J101
Unit: mmç
• The 3.
30J121 - Silicon N-Channel IGBT
(Toshiba)
GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
Uni.
30J122 - Silicon N-Channel IGBT
(Toshiba)
.DataSheet.co.kr
GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT
CURRENT RESONANCE INVERTER.
30J122A - Silicon N-Channel IGBT
(Toshiba)
Discrete IGBTs Silicon N-Channel IGBT
GT30J122A
1. Applications
• Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial.
30J126 - Silicon N-Channel IGBT
(Toshiba)
GT30J126
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J126
High Power Switching Applications Fast Switching Applications
Uni.
30J127 - 600V 200A IGBT MOSFET
(ETC)
MOSFET 600V 200A IGBT Número de parte: GT30J127
Descripción:
IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient.