Datasheet4U Logo Datasheet4U.com

30JL2C41 Datasheet - Toshiba Semiconductor

30JL2C41 HIGH EFFICIENCY DIODE STACK

30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 600 V z Average Output Rectified Current : IO = 30 A z Ultra Fast Reverse-Recovery Time : trr = 50 ns (Max) z Low Switching Losses and Output Noise ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage VRRM 600 V Average Output Rect.

30JL2C41 Datasheet (309.65 KB)

Preview of 30JL2C41 PDF
30JL2C41 Datasheet Preview Page 2 30JL2C41 Datasheet Preview Page 3

Datasheet Details

Part number:

30JL2C41

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

309.65 KB

Description:

High efficiency diode stack.

📁 Related Datasheet

30J101 Silicon N-Channel IGBT (Toshiba)

30J121 Silicon N-Channel IGBT (Toshiba)

30J122 Silicon N-Channel IGBT (Toshiba)

30J122A Silicon N-Channel IGBT (Toshiba)

30J126 Silicon N-Channel IGBT (Toshiba)

30J127 600V 200A IGBT MOSFET (ETC)

30J301 Silicon N-Channel IGBT (Toshiba)

30J311 Silicon N-Channel IGBT (Toshiba)

TAGS

30JL2C41 HIGH EFFICIENCY DIODE STACK Toshiba Semiconductor

30JL2C41 Distributor