Datasheet4U Logo Datasheet4U.com

30JL2C41 HIGH EFFICIENCY DIODE STACK

30JL2C41 Description

30JL2C41 TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 30JL2C41 SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICA.

30JL2C41 Applications

* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which ma

📥 Download Datasheet

Preview of 30JL2C41 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 30J101 - Silicon N-Channel IGBT (Toshiba)
  • 30J121 - Silicon N-Channel IGBT (Toshiba)
  • 30J122 - Silicon N-Channel IGBT (Toshiba)
  • 30J122A - Silicon N-Channel IGBT (Toshiba)
  • 30J126 - Silicon N-Channel IGBT (Toshiba)
  • 30J127 - 600V 200A IGBT MOSFET (ETC)
  • 30J301 - Silicon N-Channel IGBT (Toshiba)
  • 30J311 - Silicon N-Channel IGBT (Toshiba)

📌 All Tags

HIGH EFFICIENCY DIODE STACK Toshiba Semiconductor
Toshiba Semiconductor 30JL2C41-like datasheet