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30J101 Silicon N-Channel IGBT

30J101 Description

Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications GT30J101 Unit: mmç

30J101 Applications

* GT30J101 Unit: mmç
* The 3rd Generation
* Enhancement-Mode
* High Speed: tf = 0.30 µs (max)
* Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C)ç Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms

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Silicon N-Channel IGBT Toshiba
Toshiba 30J101-like datasheet