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30J101 Datasheet - Toshiba

30J101-Toshiba.pdf

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Datasheet Details

Part number:

30J101

Manufacturer:

Toshiba ↗

File Size:

291.77 KB

Description:

Silicon n-channel igbt.

30J101, Silicon N-Channel IGBT

Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications GT30J101 Unit: mmç The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°C)ç Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temper

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