Part number:
30J126
Manufacturer:
File Size:
208.62 KB
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📄 Download 30J126 Datasheet PDF
Description:
Silicon n-channel igbt.
GT30J126
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J126
High Power Switc.
hing Applications Fast Switching Applications
Unit: mm
* Fourth-generation IGBT * Enhancement mode.