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30J126 Datasheet - Toshiba

30J126-Toshiba.pdf

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Datasheet Details

Part number:

30J126

Manufacturer:

Toshiba ↗

File Size:

208.62 KB

Description:

Silicon n-channel igbt.

30J126, Silicon N-Channel IGBT

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) Low saturation voltage: VCE (sat) = 1.95 V (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-e

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