Datasheet4U Logo Datasheet4U.com

30J126 Silicon N-Channel IGBT

30J126 Description

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Uni.

30J126 Applications

* Fast Switching Applications Unit: mm
* Fourth-generation IGBT
* Enhancement mode type
* Fast switching (FS): High speed: tf = 0.05 μs (typ. ) Low switching loss : Eon = 1.00 mJ (typ. ) : Eoff = 0.80 mJ (typ. )
* Low saturation voltage: VCE (sat) = 1.95 V (typ. ) Absolu

📥 Download Datasheet

Preview of 30J126 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 30J127 - 600V 200A IGBT MOSFET (ETC)
  • 30J324 - Transistor Silicon N-Channel IGBT (Toshiba Semiconductor)
  • 30JL2C41 - HIGH EFFICIENCY DIODE STACK (Toshiba Semiconductor)

📌 All Tags

Silicon N-Channel IGBT Toshiba
Toshiba 30J126-like datasheet