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30J122 Silicon N-Channel IGBT

30J122 Description

www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER.

30J122 Applications

* Unit: mm
* Enhancement mode type
* High speed: tf = 0.25μs (Typ. ) (IC = 50A)
* Low saturation voltage: VCE (sat) = 2.1V (Typ. ) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector

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Silicon N-Channel IGBT Toshiba
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