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30J122 Datasheet - Toshiba

30J122-Toshiba.pdf

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Datasheet Details

Part number:

30J122

Manufacturer:

Toshiba ↗

File Size:

557.62 KB

Description:

Silicon n-channel igbt.

30J122, Silicon N-Channel IGBT

www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm Enhancement mode type High speed: tf = 0.25μs (Typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Collecto

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