30J122A - Silicon N-Channel IGBT

Toshiba

Datasheet Details

(1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ. ) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ. ) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter 1 2012-06-25 Rev.1.0 Free Datasheet http://www. datasheet4u. com/ GT30J122A 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Coll.

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Published: Dec 19, 2020 |