Datasheet Details
Part number:
30J322
Manufacturer:
File Size:
422.05 KB
Description:
Silicon n-channel igbt.
Datasheet Details
Part number:
30J322
Manufacturer:
File Size:
422.05 KB
Description:
Silicon n-channel igbt.
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit: mm CHARACTERISTIC SYMBOL RATING UNIT Collector Emitter Voltage Gate Emitter Voltage DC Collect
30J322 Distributors
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