30J322

Silicon N-Channel IGBT

Toshiba

Image	Manufacturer	Part Number	B2B mpn	Description	Distributor	Stock	Quantity	Price	Buy Now
	Toshiba America Electronic Components	30J322	GT30J322(Q)	Trans IGBT Chip NCH 600V 30A 3Pin3Tab TO3PNIS (Alt: GT30J322(Q))	EBV Elektronik	0	0	$0	🛒 Buy Now

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30J322

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Toshiba ↗

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Silicon n-channel igbt.
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATIO.
N IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS z FRD included between emitter and collect.

✔ 30J322 Application

z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ.) (

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30J322 Silicon N-Channel IGBT Toshiba

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