HN1K05FU Datasheet (Toshiba Semiconductor) - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

HN1K05FU, TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

HN1K05FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K05FU For Portable Devices High Speed Switching Applications Interface Applications Unit: mm High input impedance and extremely low drive current.

Vth is low and it is possible to drive directly at low-voltage CMOS.

: Vth = 0.5 to 1.0 V Suitable for high-density mounting because of a compact package.

Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source voltage DC d