HN1K06FU Datasheet - Toshiba Semiconductor

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

HN1K06FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type HN1K06FU High Speed Switching Applications Analog Switch Applications Unit: mm High input impedance and extremely low drive current. Vth is low and it is possible to drive directly at low-voltage CMOS. : Vth = 0.5 to 1.5 V Switching speed is fast. Suitable for high-density mounting because of a compact package Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Drain-source voltage Gate-source.

HN1K06FU Datasheet (126.43 KB)

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Datasheet Details

Part number:

HN1K06FU

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

126.43 KB

Description:

Toshiba field effect transistor silicon n channel mos type.

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HN1K06FU TOSHIBA Field Effect Transistor Silicon Channel MOS Type Toshiba Semiconductor

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