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K3799 Datasheet - Toshiba Semiconductor

K3799_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

K3799

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

264.71 KB

Description:

2sk3799.

K3799, 2SK3799

2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3799 Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| = 6.0 S (typ.) Switching Regulator Applications z Low drain-source ON resistance z High forward transfer admittance z Low leakage current : IDSS = 100μA (max) (VDS = 720 V) z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate

K3799 Features

* ase contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liabil

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