Datasheet Specifications
- Part number
- K3799
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 264.71 KB
- Datasheet
- K3799_ToshibaSemiconductor.pdf
- Description
- 2SK3799
Description
2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3799 Unit: mm : RDS (ON) = 1.0 Ω (typ.) : |Yfs| =.
Features
* ase contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liabilApplications
* z Low drain-source ON resistance z High forward transfer admittance z Low leakage current : IDSS = 100μA (max) (VDS = 720 V) z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) GaK3799 Distributors
📁 Related Datasheet
📌 All Tags