SSM6K22FE Datasheet (Toshiba Semiconductor)

SSM6K22FE, Silicon N-Channel MOSFET

SSM6K22FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) SSM6K22FE High Current Switching Applications DC-DC Converter Unit: mm Suitable for high-density mounting due to compact package Low on resistance: RDS(ON) = 170 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 230 mΩ (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ±12 V Drain current DC ID Pul