SSM6K24FE Datasheet (Toshiba Semiconductor)

SSM6K24FE, Silicon N-Channel MOSFET

SSM6K24FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) SSM6K24FE High Speed Switching Applications Optimum for high-density mounting in small packages Low on-resistance: Ron = 145mΩ (max) (@VGS = 4.5 V) Ron = 180mΩ (max) (@VGS = 2.5 V) Unit: mm 1.6±0.05 1.2±0.05 0.2±0.05 1.6±0.05 1.0±0.05 0.5 0.5 Absolute Maximum Ratings (Ta = 25°C) 1 6 2 5 Characteristics Drain-Source voltage Symbol VDS Rating Unit 30 V 3 4 0.12±0.05 0.55±0.05 Gat