TK10E60W - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK10E60W
Manufacturer	Toshiba Semiconductor
File Size	251.04 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK10E60W-ToshibaSemiconductor.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanc.

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Published: Sep 11, 2014 |