Part number:
TK10J80E
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
226.43 KB
Description:
Silicon n-channel mosfet.
TK10J80E Datasheet (226.43 KB)
Datasheet Details
TK10J80E Features
* (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10J80E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial pro
TK10J80E Datasheet (226.43 KB)
Datasheet Details
TK10J80E
Toshiba ↗ Semiconductor
226.43 KB
Silicon n-channel mosfet.
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TK10J80E Distributor