TK10J80E Datasheet - Toshiba Semiconductor

TK10J80E, Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (π-MOS) TK10J80E 1.Applications * Switching Voltage Regulators 2..

Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10J80E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial pro

TK10J80E-ToshibaSemiconductor.pdf