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TK10J80E Datasheet - Toshiba Semiconductor

Silicon N-Channel MOSFET

TK10J80E Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.7 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10J80E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial pro

TK10J80E Datasheet (226.43 KB)

Preview of TK10J80E PDF

Datasheet Details

Part number:

TK10J80E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

226.43 KB

Description:

Silicon n-channel mosfet.

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TK10J80E Silicon N-Channel MOSFET Toshiba Semiconductor

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