TK10P60W - N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK10P60W
Manufacturer	Toshiba ↗ Semiconductor
File Size	244.75 KB
Description	N-Channel MOSFET
Datasheet	TK10P60W-ToshibaSemiconductor.pdf

(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10P60W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2012-09 1 2014-09-17 Rev.4.0 TK10P60W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source vol.

📁 TK10P60W Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 5, 2014 |