Part number:
TK10Q60W
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
246.30 KB
Description:
Silicon n-channel mosfet.
TK10Q60W Datasheet (246.30 KB)
Datasheet Details
TK10Q60W Features
* (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10Q60W 1: Gate 2: Drain (Heatsink) 3: Source IPAK 4.
TK10Q60W Datasheet (246.30 KB)
Datasheet Details
TK10Q60W
Toshiba ↗ Semiconductor
246.30 KB
Silicon n-channel mosfet.
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TK10Q60W Distributor