* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK10S04K3L DPAK+ 1: Gate 2: Drain (heatsink) 3
TK10S04K3L Datasheet (261.63 KB)
TK10S04K3L
Toshiba ↗ Semiconductor
261.63 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS) TK10S04K3L 1. Applications Automotive Motor Drivers DC-DC Converters Sw.
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