TK10V60W - Silicon N-Channel MOSFET

Product Overview

Toshiba Semiconductor

Part number	TK10V60W
Manufacturer	Toshiba Semiconductor
File Size	270.11 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK10V60W Datasheet
Additional preview pages of the TK10V60W datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10V60W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. ©2016 Toshiba Corporation 1 Start of commercial production.

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Published: Sep 5, 2014 |