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TK10V60W Datasheet - Toshiba Semiconductor

TK10V60W-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK10V60W

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

270.11 KB

Description:

Silicon n-channel mosfet.

TK10V60W, Silicon N-Channel MOSFET

TK10V60W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK10V60W DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain

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