TK3A60DA Datasheet - Toshiba Semiconductor

TK3A60DA N-Channel MOSFET

TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK3A60DA Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 2.2 Ω(typ.) High forward transfer admittance: |Yfs| = 1.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain curre.

TK3A60DA Features

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TK3A60DA Datasheet (191.22 KB)