TK3A65D - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK3A65D
Manufacturer	Toshiba Semiconductor
File Size	238.88 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK3A65D-ToshibaSemiconductor.pdf

(1) Low drain-source on-resistance: RDS(ON) = 1.93 Ω (typ. ) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK3A65D 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source vo.

📁 TK3A65D Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 19, 2014 |