TPC6111 Datasheet - Toshiba Semiconductor

TPC6111 P-Channel MOSFET

TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) www.DataSheet4U.com TPC6111 Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.3 to 1.0 V (VDS = 10 V, ID = 1mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage D.

TPC6111 Features

* e, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comp

TPC6111 Datasheet (225.49 KB)