TPC6113 Datasheet - Toshiba Semiconductor

TPC6113 P-Channel MOSFET

TPC6113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC6113 Lithium Ion Battery Applications Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 38 mΩ (typ.) ( VGS = 4.5V) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA) Unit: mm .

TPC6113 Features

* ifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspect

TPC6113-ToshibaSemiconductor.pdf